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| CNW11AV1 TRANSISTOR OPTOCOUPLERS PACKAGES 7.30 7.30 CIRCUIT 13.0o 3.50 0.4 3.0 1.20 2.7 0.5 0.26 6.5 7.62 6.50 2.54 13.0o DESCRIPTION The CNW11AV1X/2X/3X is an optically coupled isolator. It consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor mounted in a standard 6-pin plastic dual-in-line package. Isocom Ltd supplies a multitude of plastic optocouplers for all applications varying from standard transistor optos through to Darlington and Schmitt Trigger devices. It's massive family of optos vary in speed allowing maximum opportunity to engineers worldwide. All devices are performance guaranteed between 20C and +80C and have completed rigorous testing. The Company's customers can be assured of our commitment to stringent quality, reliability and inspection standards, as demonstrated by our existing approvals. Other customer specific options can also be offered. FEATURES 4000V Isolation 8mm (min) Creeping Distance between Emitter & Detector Leads Designed for VDE and British Standards Applications Isocom Ltd reserves the right to change the details on this specification without notice. Please consult Isocom Ltd prior to use. Isocom Ltd cannot accept liability for any errors or omissions. For sales enquiries, or further information, please contact our sales office at : Isocom Ltd, Hutton Close, Crowther Industrial Estate, District 3, Washington, NE38 0AH Tel: +44 0191 4166 546 Fax: +44 0191 4155 055 Email Isocom@isocomoptocouplers.com Or go to the Isocom Website @ : Http://www.isocomoptocouplers.com ABSOLUTE MAXIMUM RATINGS Storage Temperature Operating Temperature Lead Soldering Temperature Input-to-Output Isolation Voltage -55C to +150C -55C to +100C 260C 1.6mm from case for 10S 4000VDC 60mA 6V 3A 100mW 70V 7V 70V 300mW Input Diode Forward DC Current Reverse DC Voltage Peak forward Current Power Dissipation 1S p.w. 300 pps Derate linearly above 25C at 1.33mW/C. BVCEO BVECO BVCBO Derate linearly above 25C at 2.0mW/C Output Transistor Collector-Emitter Voltage Emitter-collector voltage Collector-base Voltage Power Dissipation ELECTRICAL CHARACTERISTICS TA = 25C U.O.S. (each channel where appropriate). Input Diode Electrical Characteristics Parameter Symbol Test Conditions Forward Voltage VF IF = 10mA IF = 10mA, TA= -55OC IF = 10mA, TA= +100OC Reverse Current IR VR= 6.0V Output Detector Electrical Characteristics Collector-Emitter BVCEO IC = 1mA Breakdown Voltage Emitter-base Voltage BVEBO IE= 100A Collector-base Voltage BVCBO IC= 100A Collector-emitter Dark ICEO VCE= 10V, IF= 0 Current Collector-emitter CCE VCE= 10V, f= 1Mhz Capacitance Coupled Electrical Characteristics DC Current Transfer Ratio IC/IF IF = 10mA, VCE = 10V Device Min 0.8 0.9 Typ Max 1.5 1.7 1.4 10 Units V V V A V V V nA pF 70 7 70 50 2.0 AV1X AV2X AV3X 100 50 20 300 % Input-to-Output Isolation Resistance Collector-Emitter Saturation Voltage Capacitance Input to Output Turn-on Time Turn-off Time Input-to-Output Isolation Voltage RISO VCE(Sat) CIO TON TOFF VIO= 500V IF= 20mA, IC= 2mA f= 1Mhz VCC= 10V, IC= 2mA, RL= 100 1011 0.4 0.5 15 15 4000 V pF S S V Isocom Ltd reserves the right to change the details on this specification without notice. Please consult Isocom Ltd prior to use. Isocom Ltd cannot accept liability for any errors or omissions. For sales enquiries, or further information, please contact our sales office at : Isocom Ltd, Hutton Close, Crowther Industrial Estate, District 3, Washington, NE38 0AH Tel: +44 0191 4166 546 Fax: +44 0191 4155 055 Email Isocom@isocomoptocouplers.com Or go to the Isocom Website @ : Http://www.isocomoptocouplers.com |
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